Investigation of noise sources in platinum silicide Schottky barrier diodes

Investigation of noise sources in platinum silicide Schottky barrier diodes

Low-frequency noise measurements have been carried out in platinum silicide Schottky diodes on n-type silicon in the forward conduction regime and with the forward current IF as a parameter. The power spectral density of the current fluctuations shows a 1/f behavior and is proportional to IFβ (with...

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Veröffentlicht in:Applied physics letters 2002-02, Vol.80 (8), p.1468-1470
Hauptverfasser: Papatzika, S., Hastas, N. A., Angelis, C. T., Dimitriadis, C. A., Kamarinos, G., Lee, J. I.
Format: Artikel
Sprache:eng
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Zusammenfassung:Low-frequency noise measurements have been carried out in platinum silicide Schottky diodes on n-type silicon in the forward conduction regime and with the forward current IF as a parameter. The power spectral density of the current fluctuations shows a 1/f behavior and is proportional to IFβ (with 1
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1454208