Switching field trends in pseudo spin valve nanoelement arrays

Room temperature magnetic properties of arrays of NiFe 6 nm/Cu 3–6 nm Co 4 nm pseudospin valve elements with widths below 100 nm have been investigated as a function of the aspect ratio of the elements. The elements are made from sputtered film stacks patterned using interference lithography and ion...

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Veröffentlicht in:Journal of applied physics 2002-05, Vol.91 (10), p.7317-7319
Hauptverfasser: Castaño, F. J., Hao, Y., Ross, C. A., Vögeli, B., Smith, Henry I., Haratani, S.
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container_end_page 7319
container_issue 10
container_start_page 7317
container_title Journal of applied physics
container_volume 91
creator Castaño, F. J.
Hao, Y.
Ross, C. A.
Vögeli, B.
Smith, Henry I.
Haratani, S.
description Room temperature magnetic properties of arrays of NiFe 6 nm/Cu 3–6 nm Co 4 nm pseudospin valve elements with widths below 100 nm have been investigated as a function of the aspect ratio of the elements. The elements are made from sputtered film stacks patterned using interference lithography and ion milling. The separate magnetic switching of the Co and NiFe layers can be clearly distinguished. The magnetic layers interact through both exchange and magnetostatic coupling. As both the aspect ratio of the element and the Cu spacer thickness increase, the magnetostatic coupling becomes weaker and the magnetization of the layers becomes coupled parallel at remanence.
doi_str_mv 10.1063/1.1452261
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title Switching field trends in pseudo spin valve nanoelement arrays
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