Switching field trends in pseudo spin valve nanoelement arrays

Room temperature magnetic properties of arrays of NiFe 6 nm/Cu 3–6 nm Co 4 nm pseudospin valve elements with widths below 100 nm have been investigated as a function of the aspect ratio of the elements. The elements are made from sputtered film stacks patterned using interference lithography and ion...

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Veröffentlicht in:Journal of applied physics 2002-05, Vol.91 (10), p.7317-7319
Hauptverfasser: Castaño, F. J., Hao, Y., Ross, C. A., Vögeli, B., Smith, Henry I., Haratani, S.
Format: Artikel
Sprache:eng
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Zusammenfassung:Room temperature magnetic properties of arrays of NiFe 6 nm/Cu 3–6 nm Co 4 nm pseudospin valve elements with widths below 100 nm have been investigated as a function of the aspect ratio of the elements. The elements are made from sputtered film stacks patterned using interference lithography and ion milling. The separate magnetic switching of the Co and NiFe layers can be clearly distinguished. The magnetic layers interact through both exchange and magnetostatic coupling. As both the aspect ratio of the element and the Cu spacer thickness increase, the magnetostatic coupling becomes weaker and the magnetization of the layers becomes coupled parallel at remanence.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1452261