Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique

We demonstrate the usefulness of the thermally-stimulated current (TSC) technique for investigating shallow interface state defects in silicon carbide metal–oxide–semiconductor (MOS) structures. For dry oxides, low-temperature TSC measurements reveal a high density of near-interfacial oxide traps (b...

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Veröffentlicht in:	Applied physics letters 2001-12, Vol.79 (24), p.4034-4036
Hauptverfasser:	Ólafsson, H. Ö., Sveinbjörnsson, E. Ö., Rudenko, T. E., Tyagulski, I. P., Osiyuk, I. N., Lysenko, V. S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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