Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique

We demonstrate the usefulness of the thermally-stimulated current (TSC) technique for investigating shallow interface state defects in silicon carbide metal–oxide–semiconductor (MOS) structures. For dry oxides, low-temperature TSC measurements reveal a high density of near-interfacial oxide traps (b...

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Veröffentlicht in:Applied physics letters 2001-12, Vol.79 (24), p.4034-4036
Hauptverfasser: Ólafsson, H. Ö., Sveinbjörnsson, E. Ö., Rudenko, T. E., Tyagulski, I. P., Osiyuk, I. N., Lysenko, V. S.
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Sprache:eng
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Zusammenfassung:We demonstrate the usefulness of the thermally-stimulated current (TSC) technique for investigating shallow interface state defects in silicon carbide metal–oxide–semiconductor (MOS) structures. For dry oxides, low-temperature TSC measurements reveal a high density of near-interfacial oxide traps (border traps) close to the band edges of 6H–SiC. Furthermore we find that annealing the SiC/SiO2 interface in pyrogenic steam at 950 °C (reoxidation) essentially reduces the density of deep interface states, while it increases the density of shallow states. Our results agree with observations of the appearance of a negative oxide charge in reoxidized MOS capacitors and the corresponding increase of the threshold voltage in n channel metal–oxide–semiconductor field-effect transistors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1424479