Photoluminescence frequency up-conversion in GaSe single crystals as studied by confocal microscopy

The photoluminescence spectrum of melt-grown GaSe single crystals was investigated with a confocal Raman microscope equipped with a HeNe laser. Three luminescence bands of different intensity were observed, which are mainly located to the blue of the laser line. The luminescence signals show a quadr...

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Veröffentlicht in:Journal of applied physics 2002-02, Vol.91 (3), p.1081-1086
Hauptverfasser: Fan, Y., Bauer, M., Kador, L., Allakhverdiev, K. R., Salaev, E. Yu
Format: Artikel
Sprache:eng
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Zusammenfassung:The photoluminescence spectrum of melt-grown GaSe single crystals was investigated with a confocal Raman microscope equipped with a HeNe laser. Three luminescence bands of different intensity were observed, which are mainly located to the blue of the laser line. The luminescence signals show a quadratic dependence on excitation intensity. The effect is interpreted as second-harmonic generation in the strongly optically nonlinear material followed by the excitation of electrons into the conduction band and luminescence emission from direct-gap Wannier excitons. The relative intensities of the three luminescence peaks exhibit a spatial variation on the crystal surface, which was mapped with the confocal microscope. Possible explanations of this effect are discussed. In an external electric field the luminescence shows a strong increase and a quadratic redshift, whose magnitude is consistent with the Franz–Keldysh mechanism.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1421215