Erratum: “Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy” [Appl. Phys. Lett. 79 , 1094 (2001)]

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Veröffentlicht in:	Applied physics letters 2001-10, Vol.79 (17), p.2850-2850
Hauptverfasser:	Li, Wei, Pessa, Markus, Ahlgren, Tommy, Dekker, James
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Sprache:	eng
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title	Erratum: “Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy” [Appl. Phys. Lett. 79 , 1094 (2001)]
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