Magnetic and structural properties of Mn-implanted GaN

High doses (1015–5×1016 cm−2) of Mn+ ions were implanted into p-GaN at ∼350 °C and annealed at 700–1000 °C. At the high end of this dose range, platelet structures of GaxMn1−xN were formed. The presence of these regions correlated with ferromagnetic behavior in the samples up to ∼250 K. At low doses...

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Veröffentlicht in:Applied physics letters 2001-05, Vol.78 (22), p.3475-3477
Hauptverfasser: Theodoropoulou, N., Hebard, A. F., Overberg, M. E., Abernathy, C. R., Pearton, S. J., Chu, S. N. G., Wilson, R. G.
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Sprache:eng
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Zusammenfassung:High doses (1015–5×1016 cm−2) of Mn+ ions were implanted into p-GaN at ∼350 °C and annealed at 700–1000 °C. At the high end of this dose range, platelet structures of GaxMn1−xN were formed. The presence of these regions correlated with ferromagnetic behavior in the samples up to ∼250 K. At low doses, the implanted led to a buried band of defects at the end of the ion range.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1376659