Magnetic and structural properties of Mn-implanted GaN
High doses (1015–5×1016 cm−2) of Mn+ ions were implanted into p-GaN at ∼350 °C and annealed at 700–1000 °C. At the high end of this dose range, platelet structures of GaxMn1−xN were formed. The presence of these regions correlated with ferromagnetic behavior in the samples up to ∼250 K. At low doses...
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Veröffentlicht in: | Applied physics letters 2001-05, Vol.78 (22), p.3475-3477 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | High doses (1015–5×1016 cm−2) of Mn+ ions were implanted into p-GaN at ∼350 °C and annealed at 700–1000 °C. At the high end of this dose range, platelet structures of GaxMn1−xN were formed. The presence of these regions correlated with ferromagnetic behavior in the samples up to ∼250 K. At low doses, the implanted led to a buried band of defects at the end of the ion range. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1376659 |