Resonant interband tunnel diodes with AlGaSb barriers

The peak current density of InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling diodes has been enhanced by replacing the AlSb barriers with Al1−xGaxSb that has a narrower band gap. The devices were grown by molecular beam epitaxy and tested at room temperature. Diodes with nominally identical 7-M...

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Veröffentlicht in:	Journal of applied physics 2001-05, Vol.89 (10), p.5791-5793
Hauptverfasser:	Magno, R., Bracker, A. S., Bennett, B. R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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