The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2–3.6 μm (2800–3100  cm −1 )

A method was used to measure the width of emission lines of a type of semiconductor laser with composition InAsSb/InAsSbP. This type of laser was manufactured specially for absorption high-resolution spectroscopy of gases absorbing in the 2800–3100 cm −1 region. Parameters used for calculation of spectral emission linewidths were obtained using selected rotation-vibration lines of the gaseous molecules N 2 O , CH 3 Cl , and OCS. The estimated spectral emission linewidths varied in the range 10–30 MHz in dependence of the current passing and the type of laser.