Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers

Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers

We report on the determination of thermal resistance, facet temperature profile, and heat flux of GaAs/Al0.33Ga0.67As quantum-cascade lasers operating in pulsed mode, using a microprobe band-to-band photoluminescence technique. The thermal resistance of epilayer-side mounted lasers is ∼30% smaller t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2001-02, Vol.78 (9), p.1177-1179
Hauptverfasser: Spagnolo, Vincenzo, Troccoli, Mariano, Scamarcio, Gaetano, Becker, Cyrille, Glastre, Geneviève, Sirtori, Carlo
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1179
container_issue 9
container_start_page 1177
container_title Applied physics letters
container_volume 78
creator Spagnolo, Vincenzo
Troccoli, Mariano
Scamarcio, Gaetano
Becker, Cyrille
Glastre, Geneviève
Sirtori, Carlo
description We report on the determination of thermal resistance, facet temperature profile, and heat flux of GaAs/Al0.33Ga0.67As quantum-cascade lasers operating in pulsed mode, using a microprobe band-to-band photoluminescence technique. The thermal resistance of epilayer-side mounted lasers is ∼30% smaller than that of substrate-side mounted ones. The dependence of the thermal resistance on the injection conditions and its correlation with the output power is also reported.
doi_str_mv 10.1063/1.1351850
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1351850</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1351850</sourcerecordid><originalsourceid>FETCH-LOGICAL-c227t-95fa7b3312bd7e538b61104d6ec1414ef1536d4be40d85a0c5bb1c14ba154ade3</originalsourceid><addsrcrecordid>eNotkEFLw0AQhRdRsFYP_oO9ekg6k8km6TEUrULBSz3H2c2EVpK27qQH_70Re3o83uM9-Ix5REgRClpgiuSwcnBlZghlmRBidW1mAEBJsXR4a-5UvybrMqKZ-dzuJA7c2yi615EPQSwfWjvKcJLI4zmKDTuOHEaJU2Ef1B47u-ZaF3UPKdGaIS3KWu33mQ_jeUgCa-BWbM8qUe_NTce9ysNF5-bj5Xm7ek027-u3Vb1JQpaVY7J0HZeeCDPfluKo8gUi5G0hAXPMpUNHRZt7yaGtHENw3uMUeUaXT280N0__uyEeVaN0zSnuB44_DULzh6bB5oKGfgEWb1W2</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers</title><source>Scitation (American Institute of Physics)</source><source>AIP Digital Archive</source><creator>Spagnolo, Vincenzo ; Troccoli, Mariano ; Scamarcio, Gaetano ; Becker, Cyrille ; Glastre, Geneviève ; Sirtori, Carlo</creator><creatorcontrib>Spagnolo, Vincenzo ; Troccoli, Mariano ; Scamarcio, Gaetano ; Becker, Cyrille ; Glastre, Geneviève ; Sirtori, Carlo</creatorcontrib><description>We report on the determination of thermal resistance, facet temperature profile, and heat flux of GaAs/Al0.33Ga0.67As quantum-cascade lasers operating in pulsed mode, using a microprobe band-to-band photoluminescence technique. The thermal resistance of epilayer-side mounted lasers is ∼30% smaller than that of substrate-side mounted ones. The dependence of the thermal resistance on the injection conditions and its correlation with the output power is also reported.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1351850</identifier><language>eng</language><ispartof>Applied physics letters, 2001-02, Vol.78 (9), p.1177-1179</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c227t-95fa7b3312bd7e538b61104d6ec1414ef1536d4be40d85a0c5bb1c14ba154ade3</citedby><cites>FETCH-LOGICAL-c227t-95fa7b3312bd7e538b61104d6ec1414ef1536d4be40d85a0c5bb1c14ba154ade3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Spagnolo, Vincenzo</creatorcontrib><creatorcontrib>Troccoli, Mariano</creatorcontrib><creatorcontrib>Scamarcio, Gaetano</creatorcontrib><creatorcontrib>Becker, Cyrille</creatorcontrib><creatorcontrib>Glastre, Geneviève</creatorcontrib><creatorcontrib>Sirtori, Carlo</creatorcontrib><title>Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers</title><title>Applied physics letters</title><description>We report on the determination of thermal resistance, facet temperature profile, and heat flux of GaAs/Al0.33Ga0.67As quantum-cascade lasers operating in pulsed mode, using a microprobe band-to-band photoluminescence technique. The thermal resistance of epilayer-side mounted lasers is ∼30% smaller than that of substrate-side mounted ones. The dependence of the thermal resistance on the injection conditions and its correlation with the output power is also reported.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNotkEFLw0AQhRdRsFYP_oO9ekg6k8km6TEUrULBSz3H2c2EVpK27qQH_70Re3o83uM9-Ix5REgRClpgiuSwcnBlZghlmRBidW1mAEBJsXR4a-5UvybrMqKZ-dzuJA7c2yi615EPQSwfWjvKcJLI4zmKDTuOHEaJU2Ef1B47u-ZaF3UPKdGaIS3KWu33mQ_jeUgCa-BWbM8qUe_NTce9ysNF5-bj5Xm7ek027-u3Vb1JQpaVY7J0HZeeCDPfluKo8gUi5G0hAXPMpUNHRZt7yaGtHENw3uMUeUaXT280N0__uyEeVaN0zSnuB44_DULzh6bB5oKGfgEWb1W2</recordid><startdate>20010226</startdate><enddate>20010226</enddate><creator>Spagnolo, Vincenzo</creator><creator>Troccoli, Mariano</creator><creator>Scamarcio, Gaetano</creator><creator>Becker, Cyrille</creator><creator>Glastre, Geneviève</creator><creator>Sirtori, Carlo</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20010226</creationdate><title>Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers</title><author>Spagnolo, Vincenzo ; Troccoli, Mariano ; Scamarcio, Gaetano ; Becker, Cyrille ; Glastre, Geneviève ; Sirtori, Carlo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c227t-95fa7b3312bd7e538b61104d6ec1414ef1536d4be40d85a0c5bb1c14ba154ade3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Spagnolo, Vincenzo</creatorcontrib><creatorcontrib>Troccoli, Mariano</creatorcontrib><creatorcontrib>Scamarcio, Gaetano</creatorcontrib><creatorcontrib>Becker, Cyrille</creatorcontrib><creatorcontrib>Glastre, Geneviève</creatorcontrib><creatorcontrib>Sirtori, Carlo</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Spagnolo, Vincenzo</au><au>Troccoli, Mariano</au><au>Scamarcio, Gaetano</au><au>Becker, Cyrille</au><au>Glastre, Geneviève</au><au>Sirtori, Carlo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers</atitle><jtitle>Applied physics letters</jtitle><date>2001-02-26</date><risdate>2001</risdate><volume>78</volume><issue>9</issue><spage>1177</spage><epage>1179</epage><pages>1177-1179</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report on the determination of thermal resistance, facet temperature profile, and heat flux of GaAs/Al0.33Ga0.67As quantum-cascade lasers operating in pulsed mode, using a microprobe band-to-band photoluminescence technique. The thermal resistance of epilayer-side mounted lasers is ∼30% smaller than that of substrate-side mounted ones. The dependence of the thermal resistance on the injection conditions and its correlation with the output power is also reported.</abstract><doi>10.1063/1.1351850</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2001-02, Vol.78 (9), p.1177-1179
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_1351850
source Scitation (American Institute of Physics); AIP Digital Archive
title Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-18T17%3A04%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Thermal%20resistance%20and%20temperature%20characteristics%20of%20GaAs/Al0.33Ga0.67As%20quantum-cascade%20lasers&rft.jtitle=Applied%20physics%20letters&rft.au=Spagnolo,%20Vincenzo&rft.date=2001-02-26&rft.volume=78&rft.issue=9&rft.spage=1177&rft.epage=1179&rft.pages=1177-1179&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1351850&rft_dat=%3Ccrossref%3E10_1063_1_1351850%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true