Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers

Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers

We report on the determination of thermal resistance, facet temperature profile, and heat flux of GaAs/Al0.33Ga0.67As quantum-cascade lasers operating in pulsed mode, using a microprobe band-to-band photoluminescence technique. The thermal resistance of epilayer-side mounted lasers is ∼30% smaller t...

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Veröffentlicht in:Applied physics letters 2001-02, Vol.78 (9), p.1177-1179
Hauptverfasser: Spagnolo, Vincenzo, Troccoli, Mariano, Scamarcio, Gaetano, Becker, Cyrille, Glastre, Geneviève, Sirtori, Carlo
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Sprache:eng
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Zusammenfassung:We report on the determination of thermal resistance, facet temperature profile, and heat flux of GaAs/Al0.33Ga0.67As quantum-cascade lasers operating in pulsed mode, using a microprobe band-to-band photoluminescence technique. The thermal resistance of epilayer-side mounted lasers is ∼30% smaller than that of substrate-side mounted ones. The dependence of the thermal resistance on the injection conditions and its correlation with the output power is also reported.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1351850