Emission properties of an amorphous AlN:Cr3+ thin-film phosphor

Emission properties of an amorphous AlN:Cr3+ thin-film phosphor

Chromium-doped aluminum nitride (AlN:Cr) films were grown on p-doped silicon (111) by rf magnetron sputtering in a nitrogen atmosphere at a pressure of 10−4 Torr. Film thickness was typically 200 nm. After growth, the films were “activated” at ∼1300 K for 30 min in a nitrogen atmosphere. Films activ...

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Veröffentlicht in:Applied physics letters 2001-02, Vol.78 (9), p.1246-1248
Hauptverfasser: Caldwell, M. L., Martin, A. L., Dimitrova, V. I., Van Patten, P. G., Kordesch, M. E., Richardson, H. H.
Format: Artikel
Sprache:eng
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Zusammenfassung:Chromium-doped aluminum nitride (AlN:Cr) films were grown on p-doped silicon (111) by rf magnetron sputtering in a nitrogen atmosphere at a pressure of 10−4 Torr. Film thickness was typically 200 nm. After growth, the films were “activated” at ∼1300 K for 30 min in a nitrogen atmosphere. Films activated in this manner exhibit intense cathodoluminescence and photoluminescence emission. Spectral evidence demonstrates conclusively that the luminescent centers are Cr3+ ions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1351531