Sb enhancement of lateral superlattice formation in GaInP

Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by...

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Veröffentlicht in:Applied physics letters 2001-03, Vol.78 (10), p.1376-1378
Hauptverfasser: Fetzer, C. M., Lee, R. T., Jun, S. W., Stringfellow, G. B., Lee, S. M., Seong, T. Y.
Format: Artikel
Sprache:eng
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Zusammenfassung:Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by Sb addition and that polarization along the [1̄10] direction is as much as 41 times larger than along [110]. Transmission electron microscopy results show a lamellar domain structure in the [1̄10]-zone axis dark-field images with a period of 120 nm. Atomic force microscopy shows surface undulations with the same period along the [1̄10] direction. The results demonstrate an increase in the magnitude of the presence of lateral composition modulation with increasing Sb concentration.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1350424