Improved performance of amorphous silicon thin film transistors by cyanide treatment

Improved performance of amorphous silicon thin film transistors by cyanide treatment

We have examined the impact of a simple, wet chemical postgrowth treatment of “immersing in KCN solution” on the performance of inverted staggered amorphous silicon n-channel thin film transistors. Results show that the cyanide treatment significantly improves the overall transistor performance by t...

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Veröffentlicht in:Applied physics letters 2001-02, Vol.78 (6), p.751-753
Hauptverfasser: Aiyer, Hemantkumar N., Nishioka, Daikichi, Matsuki, Nobuyuki, Shinno, Hiroyuki, Perera, V. P. S., Chikyow, Toyohiro, Kobayashi, Hikaru, Koinuma, Hideomi
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Sprache:eng
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Zusammenfassung:We have examined the impact of a simple, wet chemical postgrowth treatment of “immersing in KCN solution” on the performance of inverted staggered amorphous silicon n-channel thin film transistors. Results show that the cyanide treatment significantly improves the overall transistor performance by the elimination of defect states.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1344230