Effect of residual stress on the Raman-spectrum analysis of tetrahedral amorphous carbon films
Tetrahedral amorphous carbon (ta-C) films deposited by the filtered vacuum arc process have large compressive residual growth stresses that depend on the atomic-bond structure. We observed that the G peak of the Raman spectrum shifts to higher frequency by 4.1±0.5 cm−1/GPa due to the residual compre...
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Veröffentlicht in: | Applied physics letters 2001-01, Vol.78 (5), p.631-633 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Tetrahedral amorphous carbon (ta-C) films deposited by the filtered vacuum arc process have large compressive residual growth stresses that depend on the atomic-bond structure. We observed that the G peak of the Raman spectrum shifts to higher frequency by 4.1±0.5 cm−1/GPa due to the residual compressive stress. This value agrees well with the calculated Raman-peak shift of the graphite plane due to applied stress. By considering the effect of residual stress on the G-peak position, we also observe a similar dependence between the G-peak position and the atomic-bond structure in both ta-C and hydrogenated amorphous carbon (a-C:H) films; namely, that a higher sp2 bond content shifts the G-peak position to higher frequency. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1343840 |