Oxidation kinetics in SrTiO3 homoepitaxy on SrTiO3(001)
Using an oblique-incidence optical reflectivity difference technique, we investigated kinetic processes in SrTiO3 homoepitaxy on SrTiO3(001) under pulsed-laser deposition conditions. Depending upon growth temperature and oxygen ambient pressure, we found that the oxidation of an as-grown SrTiO3 mono...
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Veröffentlicht in: | Applied physics letters 2001-01, Vol.78 (4), p.460-462 |
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creator | Zhu, X. D. Si, Weidong Xi, X. X. Jiang, Qidu |
description | Using an oblique-incidence optical reflectivity difference technique, we investigated kinetic processes in SrTiO3 homoepitaxy on SrTiO3(001) under pulsed-laser deposition conditions. Depending upon growth temperature and oxygen ambient pressure, we found that the oxidation of an as-grown SrTiO3 monolayer may take a much longer time to complete than the recrystallization of the monolayer. The oxidation reaction was found to be characterized by an effective activation energy barrier of 1.35 eV and a large preexponential factor. |
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X.</au><au>Jiang, Qidu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Oxidation kinetics in SrTiO3 homoepitaxy on SrTiO3(001)</atitle><jtitle>Applied physics letters</jtitle><date>2001-01-22</date><risdate>2001</risdate><volume>78</volume><issue>4</issue><spage>460</spage><epage>462</epage><pages>460-462</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Using an oblique-incidence optical reflectivity difference technique, we investigated kinetic processes in SrTiO3 homoepitaxy on SrTiO3(001) under pulsed-laser deposition conditions. Depending upon growth temperature and oxygen ambient pressure, we found that the oxidation of an as-grown SrTiO3 monolayer may take a much longer time to complete than the recrystallization of the monolayer. 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title | Oxidation kinetics in SrTiO3 homoepitaxy on SrTiO3(001) |
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