Investigation of deep levels in semi-insulating GaAs by means of the temperature change piezoelectric photo-thermal measurements
The temperature variation of the piezoelectric photo-thermal (PPT) signal intensity of semi-insulating (SI) GaAs from 20 to 150 K was measured. Four peaks at 50, 70, 110, and 125 K were observed in the PPT signal. From the theoretical analysis based on the rate equations of electrons in the conducti...
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| Veröffentlicht in: | Journal of applied physics 2001-02, Vol.89 (3), p.1751-1754 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The temperature variation of the piezoelectric photo-thermal (PPT) signal intensity of semi-insulating (SI) GaAs from 20 to 150 K was measured. Four peaks at 50, 70, 110, and 125 K were observed in the PPT signal. From the theoretical analysis based on the rate equations of electrons in the conduction band and deep levels, we concluded that the observed four peaks were due to the nonradiative electron transitions through EL6, EL7, EL15, and an unspecified deep level, respectively. Deep levels with extremely low concentration (1012–1015 cm−3) were clearly identified in SI GaAs by using the PPT method. |
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| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.1336560 |