Improvement on epitaxial grown of InN by migration enhanced epitaxy

Epitaxial growth of InN on (0001) sapphire with an AlN buffer layer was studied by migration-enhanced epitaxy, which is composed of an alternative supply of pure In atoms and N2 plasma. A series of samples were prepared with different substrate temperatures ranging from 360 to 590 °C. As-grown films...

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Veröffentlicht in:	Applied physics letters 2000-10, Vol.77 (16), p.2548-2550
Hauptverfasser:	Lu, Hai, Schaff, William J., Hwang, Jeonghyun, Wu, Hong, Yeo, Wesley, Pharkya, Amit, Eastman, Lester F.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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