Improvement on epitaxial grown of InN by migration enhanced epitaxy

Epitaxial growth of InN on (0001) sapphire with an AlN buffer layer was studied by migration-enhanced epitaxy, which is composed of an alternative supply of pure In atoms and N2 plasma. A series of samples were prepared with different substrate temperatures ranging from 360 to 590 °C. As-grown films...

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Veröffentlicht in:Applied physics letters 2000-10, Vol.77 (16), p.2548-2550
Hauptverfasser: Lu, Hai, Schaff, William J., Hwang, Jeonghyun, Wu, Hong, Yeo, Wesley, Pharkya, Amit, Eastman, Lester F.
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Sprache:eng
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Zusammenfassung:Epitaxial growth of InN on (0001) sapphire with an AlN buffer layer was studied by migration-enhanced epitaxy, which is composed of an alternative supply of pure In atoms and N2 plasma. A series of samples were prepared with different substrate temperatures ranging from 360 to 590 °C. As-grown films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction, atomic-force microscopy (AFM), and Hall measurements. Both XRD θ–2θ and ω scans show that the full width at half maximum of the (0002) peak nearly continuously decrease with increasing growth temperature, while InN grown at 590 °C shows the poorest surface morphology from AFM. It is suggested that three-dimensional characterization is necessary for an accurate evaluation of the quality of the InN epilayer. Hall mobility as high as 542 cm2/V s was achieved on film grown at ∼500 °C with an electron concentration of 3×1018 cm−3 at room temperature. These results argue against the common view that nitrogen vacancies are responsible for the high background n-type conductivity of InN. To illuminate the relationship between Hall mobility and carrier concentration, the electrical properties of all InN films grown recently were summarized.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1318235