Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

We report the confirmed occurrence of Fowler–Nordheim hole tunneling in p-4H–SiC metal-oxide-semiconductor capacitor structures. The effective mass for holes in the oxide is found to be in the range of 0.35m–0.52m, where m is the free electron mass.

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Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 2000-10, Vol.77 (16), p.2560-2562
Hauptverfasser:	Chanana, R. K., McDonald, K., Di Ventra, M., Pantelides, S. T., Feldman, L. C., Chung, G. Y., Tin, C. C., Williams, J. R., Weller, R. A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We report the confirmed occurrence of Fowler–Nordheim hole tunneling in p-4H–SiC metal-oxide-semiconductor capacitor structures. The effective mass for holes in the oxide is found to be in the range of 0.35m–0.52m, where m is the free electron mass.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.1318229