X-ray diffraction analysis of the defect structure in epitaxial GaN

High-resolution x-ray diffraction has been used to analyze the type and density of threading dislocations in (001)-oriented GaN epitaxial layers. For this, (00l) and (hkl) Bragg reflections with h or k nonzero were studied, the latter one measured in skew symmetric diffraction geometry. The defect a...

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Veröffentlicht in:Applied physics letters 2000-10, Vol.77 (14), p.2145-2147
Hauptverfasser: Heinke, H., Kirchner, V., Einfeldt, S., Hommel, D.
Format: Artikel
Sprache:eng
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Zusammenfassung:High-resolution x-ray diffraction has been used to analyze the type and density of threading dislocations in (001)-oriented GaN epitaxial layers. For this, (00l) and (hkl) Bragg reflections with h or k nonzero were studied, the latter one measured in skew symmetric diffraction geometry. The defect analysis was applied to a variety of GaN layers grown by molecular-beam epitaxy under very different conditions. The outcome is a fundamental correlation between the densities of edge- and screw-type dislocations.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1314877