Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions

We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO3/Si(001) interfaces, as prepared by molecular-beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at t...

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Veröffentlicht in:Applied physics letters 2000-09, Vol.77 (11), p.1662-1664
Hauptverfasser: Chambers, S. A., Liang, Y., Yu, Z., Droopad, R., Ramdani, J., Eisenbeiser, K.
Format: Artikel
Sprache:eng
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Zusammenfassung:We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO3/Si(001) interfaces, as prepared by molecular-beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at the valence band edge. In addition, band bending is much larger at the p-Si heterojunction than at the n-type heterojunction. Previously published threshold voltage behavior for these interfaces can now be understood in light of the present results.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1310209