Electron-beam induced degradation in CdTe photovoltaics

Electron-beam induced degradation in CdTe photovoltaics

We used electron beam induced current (EBIC) to measure degradation of CdTe photovoltaic cells. We have observed that: (i) the EBIC signal shows a considerable, continuous degradation depending on the electron-beam current, scan area, energy, and sample treatment; (ii) the characteristic degradation...

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Veröffentlicht in:Journal of applied physics 2000-08, Vol.88 (4), p.1794-1801
Hauptverfasser: Harju, R., Karpov, V. G., Grecu, D., Dorer, G.
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container_issue 4
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container_title Journal of applied physics
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creator Harju, R.
Karpov, V. G.
Grecu, D.
Dorer, G.
description We used electron beam induced current (EBIC) to measure degradation of CdTe photovoltaic cells. We have observed that: (i) the EBIC signal shows a considerable, continuous degradation depending on the electron-beam current, scan area, energy, and sample treatment; (ii) the characteristic degradation time fluctuates between different spots on the same sample; and (iii) grain boundary regions are the most effective collectors of the electron-beam generated charge carriers. Our phenomenological model relates the observed degradation to defects caused by the electron-beam generated electrons and holes.
doi_str_mv 10.1063/1.1305857
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title Electron-beam induced degradation in CdTe photovoltaics
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