Electron-beam induced degradation in CdTe photovoltaics
We used electron beam induced current (EBIC) to measure degradation of CdTe photovoltaic cells. We have observed that: (i) the EBIC signal shows a considerable, continuous degradation depending on the electron-beam current, scan area, energy, and sample treatment; (ii) the characteristic degradation...
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Veröffentlicht in: | Journal of applied physics 2000-08, Vol.88 (4), p.1794-1801 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We used electron beam induced current (EBIC) to measure degradation of CdTe photovoltaic cells. We have observed that: (i) the EBIC signal shows a considerable, continuous degradation depending on the electron-beam current, scan area, energy, and sample treatment; (ii) the characteristic degradation time fluctuates between different spots on the same sample; and (iii) grain boundary regions are the most effective collectors of the electron-beam generated charge carriers. Our phenomenological model relates the observed degradation to defects caused by the electron-beam generated electrons and holes. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.1305857 |