Electron-beam induced degradation in CdTe photovoltaics

We used electron beam induced current (EBIC) to measure degradation of CdTe photovoltaic cells. We have observed that: (i) the EBIC signal shows a considerable, continuous degradation depending on the electron-beam current, scan area, energy, and sample treatment; (ii) the characteristic degradation...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2000-08, Vol.88 (4), p.1794-1801
Hauptverfasser: Harju, R., Karpov, V. G., Grecu, D., Dorer, G.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We used electron beam induced current (EBIC) to measure degradation of CdTe photovoltaic cells. We have observed that: (i) the EBIC signal shows a considerable, continuous degradation depending on the electron-beam current, scan area, energy, and sample treatment; (ii) the characteristic degradation time fluctuates between different spots on the same sample; and (iii) grain boundary regions are the most effective collectors of the electron-beam generated charge carriers. Our phenomenological model relates the observed degradation to defects caused by the electron-beam generated electrons and holes.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1305857