Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC

X-ray photoelectron spectroscopy and sputter depth profiling were used to investigate SiO2 grown on 4H- and 6H-SiC with and without a reoxidation procedure. The oxides grown and oxide-substrate interfaces formed on 4H and 6H were similar in chemistry but different from Si(100). Reoxidation changes t...

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Veröffentlicht in:Applied physics letters 2000-09, Vol.77 (10), p.1437-1439
Hauptverfasser: Jernigan, G. G., Stahlbush, R. E., Saks, N. S.
Format: Artikel
Sprache:eng
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Zusammenfassung:X-ray photoelectron spectroscopy and sputter depth profiling were used to investigate SiO2 grown on 4H- and 6H-SiC with and without a reoxidation procedure. The oxides grown and oxide-substrate interfaces formed on 4H and 6H were similar in chemistry but different from Si(100). Reoxidation changes the structure of the oxide and the abruptness of the oxide-substrate interface. We propose a model for SiC oxidation where a transition layer containing Si–Si bonds is produced between the oxide and the SiC substrate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1290490