Anatomy of μc-Si thin films by plasma enhanced chemical vapor deposition: An investigation by spectroscopic ellipsometry
A detailed analysis of the anatomy of microcrystalline (μc-Si) films deposited by plasma enhanced chemical vapor deposition from both SiF4–H2 and SiH4–H2 mixtures is performed by spectroscopic ellipsometry (SE). Specifically, the μc-Si film anatomy consists of an interface layer at the substrate/μc-...
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Veröffentlicht in: | Journal of applied physics 2000-09, Vol.88 (5), p.2408-2414 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A detailed analysis of the anatomy of microcrystalline (μc-Si) films deposited by plasma enhanced chemical vapor deposition from both SiF4–H2 and SiH4–H2 mixtures is performed by spectroscopic ellipsometry (SE). Specifically, the μc-Si film anatomy consists of an interface layer at the substrate/μc-Si bulk layer, a bulk μc-Si layer, and a surface porous layer. All these layers have their own microstructures, which need to be highlighted, since it is this overall anatomy which determines the optical properties of μc-Si films. The ability of SE to discriminate the complex microstructure of μc-Si thin films is emphasized also by the comparison with the x-ray diffraction data which cannot provide unambiguous information regarding the distribution of the crystalline and the amorphous phases along the μc-Si film thickness. Through the description of the μc-Si film anatomy, information on the effect of the growth precursors (SiF4 or SiH4) and of the substrate (c-Si or Corning glass) on the growth dynamics can be obtained. The key role of the F-atoms density and, therefore, of the etching-to-deposition competition on the growth mechanism and film microstructure is highlighted. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.1287129 |