Staircase band gap Si1−xGex/Si photodetectors

We fabricated Si1−xGex/Si photodetectors by using a staircase band gap Si1−xGex/Si structure. These devices exhibit a high optical response with a peak responsive wavelength at 0.96 μm and a responsivity of 27.8 A/W at −5 V bias. Excellent electrical characteristics evidenced by good diode rectifica...

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Veröffentlicht in:Applied physics letters 2000-09, Vol.77 (10), p.1548-1550
Hauptverfasser: Lo, Zhiyun, Jiang, Ruolian, Zheng, Youdou, Zang, Lan, Chen, Zhizhong, Zhu, Shunming, Cheng, Xuemei, Liu, Xiabing
Format: Artikel
Sprache:eng
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Zusammenfassung:We fabricated Si1−xGex/Si photodetectors by using a staircase band gap Si1−xGex/Si structure. These devices exhibit a high optical response with a peak responsive wavelength at 0.96 μm and a responsivity of 27.8 A/W at −5 V bias. Excellent electrical characteristics evidenced by good diode rectification are also demonstrated. The dark current density is 0.1 pA/μm2 at −2 V bias, and the breakdown voltage is −27 V. The high response is explained as the result of a staircase band gap by theoretical analysis.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1286958