High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate

We report on the growth and characterization of high-quality strain-relaxed SiGe alloys on a compliant silicon–on–insulator (SOI) substrate. The annealing temperature required for strain transfer has been reduced through boron implantation to the buried oxide, leading to a high quality SiGe alloy free from dislocations as evident from the near-band gap photoluminescence. Nearly complete strain relaxation (∼95%) for SiGe alloy of a thickness beyond the conventional critical thickness has been obtained.