Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)

Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)

The growth of the layered chalcogenide GaSe on cleaved GaAs(110) surfaces was investigated with photoemission and low-energy electron diffraction (LEED). GaSe films grow with their c axis perpendicular to the GaAs(110) surface. LEED patterns after initial film growth are a superposition of rectangul...

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Veröffentlicht in:Applied physics letters 2000-02, Vol.76 (9), p.1101-1103
Hauptverfasser: Rudolph, R., Tomm, Y., Pettenkofer, C., Klein, A., Jaegermann, W.
Format: Artikel
Sprache:eng
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Zusammenfassung:The growth of the layered chalcogenide GaSe on cleaved GaAs(110) surfaces was investigated with photoemission and low-energy electron diffraction (LEED). GaSe films grow with their c axis perpendicular to the GaAs(110) surface. LEED patterns after initial film growth are a superposition of rectangular GaAs:Se spots and two hexagonal domains rotated by ±5° with respect to the GaAs 〈001〉 axis. At higher film thickness a hexagonal LEED pattern with GaSe 〈120〉 ‖ GaAs 〈001〉 is obtained.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.125951