Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

A study of the light generation efficiency of a series of InAs/AlAs0.16Sb0.84 light emitting diodes with p-type InAs active layers is reported. The bulk low-injection radiative efficiency of the p-type material is shown to be as high as 24% at a hole concentration of 1.5×1017 cm−3 but to decrease wi...

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Veröffentlicht in:	Applied physics letters 2000-02, Vol.76 (8), p.943-945
Hauptverfasser:	Kane, M. J., Braithwaite, G., Emeny, M. T., Lee, D., Martin, T., Wright, D. R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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