Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

A study of the light generation efficiency of a series of InAs/AlAs0.16Sb0.84 light emitting diodes with p-type InAs active layers is reported. The bulk low-injection radiative efficiency of the p-type material is shown to be as high as 24% at a hole concentration of 1.5×1017 cm−3 but to decrease wi...

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Veröffentlicht in:Applied physics letters 2000-02, Vol.76 (8), p.943-945
Hauptverfasser: Kane, M. J., Braithwaite, G., Emeny, M. T., Lee, D., Martin, T., Wright, D. R.
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Sprache:eng
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Zusammenfassung:A study of the light generation efficiency of a series of InAs/AlAs0.16Sb0.84 light emitting diodes with p-type InAs active layers is reported. The bulk low-injection radiative efficiency of the p-type material is shown to be as high as 24% at a hole concentration of 1.5×1017 cm−3 but to decrease with increasing hole concentration in a manner consistent with the dominant low-injection nonradiative processes being Auger processes with two holes in their initial states and a total rate constant of 2×10−28 cm6 s−1. The maximum internal low-drive quantum efficiency achieved in the light emitting diodes is shown to be limited by interface recombination at the InAs/AlAs0.16Sb0.84 heterojunction and reabsorption in the active layer in addition to the bulk nonradiative processes in the InAs. A maximum value of ∼9% is achieved.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.125911