Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

A study of the light generation efficiency of a series of InAs/AlAs0.16Sb0.84 light emitting diodes with p-type InAs active layers is reported. The bulk low-injection radiative efficiency of the p-type material is shown to be as high as 24% at a hole concentration of 1.5×1017 cm−3 but to decrease wi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2000-02, Vol.76 (8), p.943-945
Hauptverfasser: Kane, M. J., Braithwaite, G., Emeny, M. T., Lee, D., Martin, T., Wright, D. R.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 945
container_issue 8
container_start_page 943
container_title Applied physics letters
container_volume 76
creator Kane, M. J.
Braithwaite, G.
Emeny, M. T.
Lee, D.
Martin, T.
Wright, D. R.
description A study of the light generation efficiency of a series of InAs/AlAs0.16Sb0.84 light emitting diodes with p-type InAs active layers is reported. The bulk low-injection radiative efficiency of the p-type material is shown to be as high as 24% at a hole concentration of 1.5×1017 cm−3 but to decrease with increasing hole concentration in a manner consistent with the dominant low-injection nonradiative processes being Auger processes with two holes in their initial states and a total rate constant of 2×10−28 cm6 s−1. The maximum internal low-drive quantum efficiency achieved in the light emitting diodes is shown to be limited by interface recombination at the InAs/AlAs0.16Sb0.84 heterojunction and reabsorption in the active layer in addition to the bulk nonradiative processes in the InAs. A maximum value of ∼9% is achieved.
doi_str_mv 10.1063/1.125911
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_125911</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_125911</sourcerecordid><originalsourceid>FETCH-LOGICAL-c225t-ccff7ffb7dcab664dfc31bdc444a550afcb5cae1c548c26d9e0244e268499d1b3</originalsourceid><addsrcrecordid>eNotkEtOwzAURS0EEqEgsQQPmST18y_JMFRQKlViQBlH9rNdDPmgOB2wN9bAmigqo6M7OVc6hNwCK4BpsYQCuKoBzkgGrCxzAVCdk4wxJnJdK7gkVym9H6fiQmRkd3_oPqgZHE2HKRj0dPI49jYOZo7jQONAN0OTlk3XpOODfrGsqCQVhVT057unXdy_zdT3cZ7jsKcujs6na3IRTJf8zT8X5PXxYbd6yrfP682q2ebIuZpzxBDKEGzp0FitpQsowDqUUhqlmAloFRoPqGSFXLvaMy6l57qSde3AigW5O3lxGlOafGg_p9ib6asF1v7VaKE91RC_ixRRBA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Kane, M. J. ; Braithwaite, G. ; Emeny, M. T. ; Lee, D. ; Martin, T. ; Wright, D. R.</creator><creatorcontrib>Kane, M. J. ; Braithwaite, G. ; Emeny, M. T. ; Lee, D. ; Martin, T. ; Wright, D. R.</creatorcontrib><description>A study of the light generation efficiency of a series of InAs/AlAs0.16Sb0.84 light emitting diodes with p-type InAs active layers is reported. The bulk low-injection radiative efficiency of the p-type material is shown to be as high as 24% at a hole concentration of 1.5×1017 cm−3 but to decrease with increasing hole concentration in a manner consistent with the dominant low-injection nonradiative processes being Auger processes with two holes in their initial states and a total rate constant of 2×10−28 cm6 s−1. The maximum internal low-drive quantum efficiency achieved in the light emitting diodes is shown to be limited by interface recombination at the InAs/AlAs0.16Sb0.84 heterojunction and reabsorption in the active layer in addition to the bulk nonradiative processes in the InAs. A maximum value of ∼9% is achieved.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.125911</identifier><language>eng</language><ispartof>Applied physics letters, 2000-02, Vol.76 (8), p.943-945</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-ccff7ffb7dcab664dfc31bdc444a550afcb5cae1c548c26d9e0244e268499d1b3</citedby><cites>FETCH-LOGICAL-c225t-ccff7ffb7dcab664dfc31bdc444a550afcb5cae1c548c26d9e0244e268499d1b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Kane, M. J.</creatorcontrib><creatorcontrib>Braithwaite, G.</creatorcontrib><creatorcontrib>Emeny, M. T.</creatorcontrib><creatorcontrib>Lee, D.</creatorcontrib><creatorcontrib>Martin, T.</creatorcontrib><creatorcontrib>Wright, D. R.</creatorcontrib><title>Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes</title><title>Applied physics letters</title><description>A study of the light generation efficiency of a series of InAs/AlAs0.16Sb0.84 light emitting diodes with p-type InAs active layers is reported. The bulk low-injection radiative efficiency of the p-type material is shown to be as high as 24% at a hole concentration of 1.5×1017 cm−3 but to decrease with increasing hole concentration in a manner consistent with the dominant low-injection nonradiative processes being Auger processes with two holes in their initial states and a total rate constant of 2×10−28 cm6 s−1. The maximum internal low-drive quantum efficiency achieved in the light emitting diodes is shown to be limited by interface recombination at the InAs/AlAs0.16Sb0.84 heterojunction and reabsorption in the active layer in addition to the bulk nonradiative processes in the InAs. A maximum value of ∼9% is achieved.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotkEtOwzAURS0EEqEgsQQPmST18y_JMFRQKlViQBlH9rNdDPmgOB2wN9bAmigqo6M7OVc6hNwCK4BpsYQCuKoBzkgGrCxzAVCdk4wxJnJdK7gkVym9H6fiQmRkd3_oPqgZHE2HKRj0dPI49jYOZo7jQONAN0OTlk3XpOODfrGsqCQVhVT057unXdy_zdT3cZ7jsKcujs6na3IRTJf8zT8X5PXxYbd6yrfP682q2ebIuZpzxBDKEGzp0FitpQsowDqUUhqlmAloFRoPqGSFXLvaMy6l57qSde3AigW5O3lxGlOafGg_p9ib6asF1v7VaKE91RC_ixRRBA</recordid><startdate>20000221</startdate><enddate>20000221</enddate><creator>Kane, M. J.</creator><creator>Braithwaite, G.</creator><creator>Emeny, M. T.</creator><creator>Lee, D.</creator><creator>Martin, T.</creator><creator>Wright, D. R.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20000221</creationdate><title>Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes</title><author>Kane, M. J. ; Braithwaite, G. ; Emeny, M. T. ; Lee, D. ; Martin, T. ; Wright, D. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-ccff7ffb7dcab664dfc31bdc444a550afcb5cae1c548c26d9e0244e268499d1b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kane, M. J.</creatorcontrib><creatorcontrib>Braithwaite, G.</creatorcontrib><creatorcontrib>Emeny, M. T.</creatorcontrib><creatorcontrib>Lee, D.</creatorcontrib><creatorcontrib>Martin, T.</creatorcontrib><creatorcontrib>Wright, D. R.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kane, M. J.</au><au>Braithwaite, G.</au><au>Emeny, M. T.</au><au>Lee, D.</au><au>Martin, T.</au><au>Wright, D. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes</atitle><jtitle>Applied physics letters</jtitle><date>2000-02-21</date><risdate>2000</risdate><volume>76</volume><issue>8</issue><spage>943</spage><epage>945</epage><pages>943-945</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>A study of the light generation efficiency of a series of InAs/AlAs0.16Sb0.84 light emitting diodes with p-type InAs active layers is reported. The bulk low-injection radiative efficiency of the p-type material is shown to be as high as 24% at a hole concentration of 1.5×1017 cm−3 but to decrease with increasing hole concentration in a manner consistent with the dominant low-injection nonradiative processes being Auger processes with two holes in their initial states and a total rate constant of 2×10−28 cm6 s−1. The maximum internal low-drive quantum efficiency achieved in the light emitting diodes is shown to be limited by interface recombination at the InAs/AlAs0.16Sb0.84 heterojunction and reabsorption in the active layer in addition to the bulk nonradiative processes in the InAs. A maximum value of ∼9% is achieved.</abstract><doi>10.1063/1.125911</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2000-02, Vol.76 (8), p.943-945
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_125911
source AIP Journals Complete; AIP Digital Archive
title Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T14%3A04%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Bulk%20and%20surface%20recombination%20in%20InAs/AlAs0.16Sb0.84%203.45%20%CE%BCm%20light%20emitting%20diodes&rft.jtitle=Applied%20physics%20letters&rft.au=Kane,%20M.%20J.&rft.date=2000-02-21&rft.volume=76&rft.issue=8&rft.spage=943&rft.epage=945&rft.pages=943-945&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.125911&rft_dat=%3Ccrossref%3E10_1063_1_125911%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true