Direct spectral probing of energy storage in Si:Er by a free-electron laser
Results of a two-color spectroscopy in the visible and the mid-infrared on erbium-doped silicon (Si:Er) are presented. In the experiments, pulsed beam provided by a free-electron laser is directed on a sample under primary above-band-gap excitation with another laser. It is shown that the powerful i...
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Veröffentlicht in: | Applied physics letters 1999-12, Vol.75 (26), p.4121-4123 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Results of a two-color spectroscopy in the visible and the mid-infrared on erbium-doped silicon (Si:Er) are presented. In the experiments, pulsed beam provided by a free-electron laser is directed on a sample under primary above-band-gap excitation with another laser. It is shown that the powerful infrared beam can be ionize carriers localized at shallow traps. Liberation of these carriers makes them available for excitation of erbium and thereby enhances the luminescence intensity. Identification of shallow levels responsible for the effect is discussed. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.125556 |