Room-temperature blue luminescence of thermally oxidized Si1−x−yGexCy thin films on Si (100) substrates

We measured at room temperature the photoluminescence spectra of the thermally oxidized Si1−x−yGexCy thin films which were grown on silicon substrates by plasma-enhanced chemical vapor deposition and then wet oxidized at 1100 °C for 20 min. The photoluminescence band with a peak at ∼393 nm under the exciting radiation of λ=241 nm was observed. Possible mechanism of this photoluminescence is discussed.