Spectral analysis of InGaAs/GaAs quantum-dot lasers

The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100–400 μm). Using a Fourier transform analysis to determine the optical path length, it is found tha...

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Veröffentlicht in:Applied physics letters 1999-10, Vol.75 (15), p.2169-2171
Hauptverfasser: Smowton, P. M., Johnston, E. J., Dewar, S. V., Hulyer, P. J., Summers, H. D., Patanè, A., Polimeni, A., Henini, M.
Format: Artikel
Sprache:eng
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Zusammenfassung:The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100–400 μm). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.124954