Ion beam synthesized Ru2Si3

In this letter we report the synthesis of the semiconductor Ru2Si3 by ion implantation into a silicon substrate. The formation of this compound has been confirmed by x-ray measurements and electron diffraction. The absorption coefficient has been determined directly by optical transmission measureme...

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Veröffentlicht in:	Applied physics letters 1999-08, Vol.75 (9), p.1282-1283
Hauptverfasser:	Sharpe, J. S., Chen, Y. L., Gwilliam, R. M., Kewell, A. K., McKinty, C. N., Lourenço, M. A., Shao, G., Homewood, K. P., Reeson Kirkby, Karen
Format:	Artikel
Sprache:	eng
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Zusammenfassung:	In this letter we report the synthesis of the semiconductor Ru2Si3 by ion implantation into a silicon substrate. The formation of this compound has been confirmed by x-ray measurements and electron diffraction. The absorption coefficient has been determined directly by optical transmission measurements. The band gap is found to be direct with a value in the region of 0.9 eV.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.124668