Anti-Stokes photoluminescence in colloidal semiconductor quantum dots

We report anti-Stokes photoluminescence (photon energy up-conversion) from size-quantized CdSe and InP nanocrystalline colloids. The observed up-conversion is highly efficient and occurs at very low excitation intensities. With low temperatures the intensity of the up-converted photoluminescence dec...

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Veröffentlicht in:Applied Physics Letters 1999-08, Vol.75 (7), p.971-973
Hauptverfasser: Poles, Ehud, Selmarten, Donald C., Mićić, Olga I., Nozik, Arthur J.
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Sprache:eng
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Zusammenfassung:We report anti-Stokes photoluminescence (photon energy up-conversion) from size-quantized CdSe and InP nanocrystalline colloids. The observed up-conversion is highly efficient and occurs at very low excitation intensities. With low temperatures the intensity of the up-converted photoluminescence decreases while that of the usual Stokes photoluminescence increases; the up-converted photoluminescence is also restricted to energies corresponding to the band gaps of the quantum dots that are present in the colloid ensemble. The anti-Stokes photoluminescence is explained by a model that involves surface states.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.124570