Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications

Perovskite Ba0.5Sr0.5TiO3 thin films have been synthesized on (001) LaAlO3 substrates by pulsed laser ablation. Extensive x-ray diffraction, rocking curve, and pole-figure studies suggest that the films are c-axis oriented and exhibit good in-plane relationship of 〈100〉BSTO//〈100〉LAO. Rutherford bac...

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Veröffentlicht in:Applied physics letters 1999-07, Vol.75 (3), p.412-414
Hauptverfasser: Chen, C. L., Feng, H. H., Zhang, Z., Brazdeikis, A., Huang, Z. J., Chu, W. K., Chu, C. W., Miranda, F. A., Van Keuls, F. W., Romanofsky, R. R., Liou, Y.
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Sprache:eng
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Zusammenfassung:Perovskite Ba0.5Sr0.5TiO3 thin films have been synthesized on (001) LaAlO3 substrates by pulsed laser ablation. Extensive x-ray diffraction, rocking curve, and pole-figure studies suggest that the films are c-axis oriented and exhibit good in-plane relationship of 〈100〉BSTO//〈100〉LAO. Rutherford backscattering spectrometry studies indicate that the epitaxial films have excellent crystalline quality with an ion beam minimum yield χmin of only 2.6%. The dielectric property measurements by the interdigital technique at 1 MHz show room-temperature values of the relative dielectric constant, εr, and loss tangent, tan δ, of 1430 and 0.007 with no bias, and 960 and 0.001 with 35 V bias, respectively. The obtained data suggest that the as-grown Ba0.5Sr0.5TiO3 films can be used for development of room-temperature tunable microwave elements.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.124392