Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon

Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon

Effects of interfacial layer growth on reactively sputter-deposited TiO2 films were studied. Leakage current was reduced to 10−8 A/cm2 at +1 V after annealing in oxygen ambient and showed tunneling-like temperature dependence. As the interfacial layer grew, interface states and hysteresis were impro...

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Veröffentlicht in:Applied physics letters 1999-05, Vol.74 (21), p.3143-3145
Hauptverfasser: Lee, Byoung Hun, Jeon, Yongjoo, Zawadzki, Keith, Qi, Wen-Jie, Lee, Jack
Format: Artikel
Sprache:eng
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Zusammenfassung:Effects of interfacial layer growth on reactively sputter-deposited TiO2 films were studied. Leakage current was reduced to 10−8 A/cm2 at +1 V after annealing in oxygen ambient and showed tunneling-like temperature dependence. As the interfacial layer grew, interface states and hysteresis were improved significantly. However, the reliability was degraded as the annealing temperature increased.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.124089