Linear arrays of CaF2 nanostructures on Si

Linear arrays of CaF2 stripes and dots, about 7 nm wide, are fabricated by self-assembly on stepped Si(111). Stripes are grown on a CaF1 passivation layer, dots directly on Si. The stripes have a precision of ±1 nm, are continuous, do not touch each other, and are attached to the top of the step edg...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1999-04, Vol.74 (15), p.2125-2127
Hauptverfasser: Viernow, J., Petrovykh, D. Y., Men, F. K., Kirakosian, A., Lin, J.-L., Himpsel, F. J.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Linear arrays of CaF2 stripes and dots, about 7 nm wide, are fabricated by self-assembly on stepped Si(111). Stripes are grown on a CaF1 passivation layer, dots directly on Si. The stripes have a precision of ±1 nm, are continuous, do not touch each other, and are attached to the top of the step edges. The stripe repulsion and their counter-intuitive attachment are explained via a reversal of the stacking at the CaF2/Si(111) interface. The dot density is 3×1011 cm−2=2 Teradots/in.2. These arrays may serve as masks in nanolithography.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123777