Anomalous critical current in double-barrier Nb/Al–AlOx–Al–AlOx–Nb devices

Anomalous critical current in double-barrier Nb/Al–AlOx–Al–AlOx–Nb devices

Double-barrier Nb/Al–AlOx–Al–AlOx–Nb devices with a “dirty” middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found.

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Veröffentlicht in:Applied physics letters 1999-03, Vol.74 (11), p.1624-1626
Hauptverfasser: Nevirkovets, I. P., Ketterson, J. B., Lomatch, S.
Format: Artikel
Sprache:eng
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Zusammenfassung:Double-barrier Nb/Al–AlOx–Al–AlOx–Nb devices with a “dirty” middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123637