Sub-40 nm PtSi Schottky source/drain metal–oxide–semiconductor field-effect transistors

PtSi source/drain p-type metal–oxide–semiconductor field-effect transistors (MOSFETs) have been fabricated at sub-40 nm channel lengths with 19 Å gate oxide. These devices employ gate-induced field emission through the PtSi ∼0.2 eV hole barrier to achieve current drives of ∼350 μA/μm at 1.2 V supply...

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Veröffentlicht in:Applied physics letters 1999-02, Vol.74 (8), p.1174-1176
Hauptverfasser: Wang, C., Snyder, John P., Tucker, J. R.
Format: Artikel
Sprache:eng
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Zusammenfassung:PtSi source/drain p-type metal–oxide–semiconductor field-effect transistors (MOSFETs) have been fabricated at sub-40 nm channel lengths with 19 Å gate oxide. These devices employ gate-induced field emission through the PtSi ∼0.2 eV hole barrier to achieve current drives of ∼350 μA/μm at 1.2 V supply. Delay times estimated by the CV/I metric extend scaling trends of conventional p-MOSFETs to ∼2 ps. Thermal emission limits on/off current ratios to ∼20–50 in undoped devices at 300 K, while ratios of ∼107 are measured at 77 K. Off-state leakage can be reduced by implanting a thin layer of fully depleted donors beneath the active region to augment the Schottky barrier height or by use of ultrathin silicon-on-insulator substrates.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123477