Dry etching of GaN substrates for high-quality homoepitaxy

Chemically assisted ion-beam etching (CAIBE) was used to remove subsurface damage from polished GaN bulk substrates prior to growth. Subsequently, GaN layers were deposited by metalorganic vapor phase epitaxy. Only the CAIBE-treated areas reveal a mirror-like surface without trenches, scratches, or...

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Veröffentlicht in:	Applied physics letters 1999-02, Vol.74 (8), p.1123-1125
Hauptverfasser:	Schauler, M., Eberhard, F., Kirchner, C., Schwegler, V., Pelzmann, A., Kamp, M., Ebeling, K. J., Bertram, F., Riemann, T., Christen, J., Prystawko, P., Leszczynski, M., Grzegory, I., Porowski, S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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