Dry etching of GaN substrates for high-quality homoepitaxy

Dry etching of GaN substrates for high-quality homoepitaxy

Chemically assisted ion-beam etching (CAIBE) was used to remove subsurface damage from polished GaN bulk substrates prior to growth. Subsequently, GaN layers were deposited by metalorganic vapor phase epitaxy. Only the CAIBE-treated areas reveal a mirror-like surface without trenches, scratches, or...

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Veröffentlicht in:Applied physics letters 1999-02, Vol.74 (8), p.1123-1125
Hauptverfasser: Schauler, M., Eberhard, F., Kirchner, C., Schwegler, V., Pelzmann, A., Kamp, M., Ebeling, K. J., Bertram, F., Riemann, T., Christen, J., Prystawko, P., Leszczynski, M., Grzegory, I., Porowski, S.
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Sprache:eng
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Zusammenfassung:Chemically assisted ion-beam etching (CAIBE) was used to remove subsurface damage from polished GaN bulk substrates prior to growth. Subsequently, GaN layers were deposited by metalorganic vapor phase epitaxy. Only the CAIBE-treated areas reveal a mirror-like surface without trenches, scratches, or holes. A dramatic increase of crystal quality is determined by low-temperature cathodoluminescence (CL). Compared to not CAIBE-treated material, the CL intensity is improved by a factor of 1000 and the linewidth is ten times narrower.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123463