Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate

Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate

Long-wavelength photoluminescence at 1.35 μm has been measured from an InGaAs quantum-well heterostructure deposited on disk-shaped InGaAs (xIn=0.05) compliant-film membranes. Strain-induced warping is avoided by utilizing a single pedestal to suspend each compliant-film disk over a GaAs substrate....

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Veröffentlicht in:Applied Physics Letters 1999-02, Vol.74 (7), p.1000-1002
Hauptverfasser: Jones, A. M., Jewell, J. L., Mabon, J. C., Reuter, E. E., Bishop, S. G., Roh, S. D., Coleman, J. J.
Format: Artikel
Sprache:eng
Schlagworte:
CATHODOLUMINESCENCE
CHEMICAL VAPOR DEPOSITION
FABRICATION
GALLIUM ARSENIDES
INDIUM COMPOUNDS
MATERIALS SCIENCE
PHOTOLUMINESCENCE
STRAINS
THIN FILMS
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Beschreibung
Zusammenfassung:Long-wavelength photoluminescence at 1.35 μm has been measured from an InGaAs quantum-well heterostructure deposited on disk-shaped InGaAs (xIn=0.05) compliant-film membranes. Strain-induced warping is avoided by utilizing a single pedestal to suspend each compliant-film disk over a GaAs substrate. Cathodoluminescence (CL) spectra verify the long-wavelength emission, and panchromatic CL images reveal that strong emission occurs only on compliant film structures supported by 1-μm-diam pedestals.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123435