Development of a low-temperature GaN chemical vapor deposition process based on a single molecular source H2GaN3

We report the development of a simple and highly efficient chemical approach to growing GaN thin films between 150 and 700 °C using a single molecular source, H2GaN3. Uncommonly low-temperature growth of nanocrystalline GaN films with a wurtzite structure is readily achieved at 150–200 °C from the t...

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Veröffentlicht in:Applied physics letters 1999-02, Vol.74 (6), p.883-885
Hauptverfasser: McMurran, Jeff, Kouvetakis, J., Smith, David J.
Format: Artikel
Sprache:eng
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Zusammenfassung:We report the development of a simple and highly efficient chemical approach to growing GaN thin films between 150 and 700 °C using a single molecular source, H2GaN3. Uncommonly low-temperature growth of nanocrystalline GaN films with a wurtzite structure is readily achieved at 150–200 °C from the thermodynamically driven decomposition of the precursor via complete elimination of the stable and relatively benign H2 and N2 by-products. Highly oriented columnar growth of crystalline material is obtained on Si at 350–700 °C and heteroepitaxial growth on sapphire at 650 °C. Crucial advantages of this precursor include: significant vapor pressure which permits rapid mass transport at 22 °C; and the facile decomposition pathway of stoichiometric elimination of H2 and N2 over a wide temperature and pressure range which allows film growth at very low temperatures and pressures (10−4–10−8 Torr) with growth rates up to 80 nm per minute.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123398