A vertical injection blue light emitting diode in substrate separated InGaN heterostructures

A vertical injection blue light emitting diode in substrate separated InGaN heterostructures

A vertical injection, light emitting InGaN quantum well diode has been demonstrated by separating the nitride heterostructure from its sapphire substrate by ultraviolet laser photoablation within a process scheme that allows transferring the devices to a host substrate. The incorporation of a dielec...

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Veröffentlicht in:Applied physics letters 1999-06, Vol.74 (24), p.3720-3722
Hauptverfasser: Song, Y.-K., Diagne, M., Zhou, H., Nurmikko, A. V., Carter-Coman, C., Kern, R. S., Kish, F. A., Krames, M. R.
Format: Artikel
Sprache:eng
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Zusammenfassung:A vertical injection, light emitting InGaN quantum well diode has been demonstrated by separating the nitride heterostructure from its sapphire substrate by ultraviolet laser photoablation within a process scheme that allows transferring the devices to a host substrate. The incorporation of a dielectric multilayer stack to the device is shown to be a first practical step towards a resonant cavity light emitting diode.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123232