InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

The design, growth by metalorganic chemical vapor deposition, and processing of an In0.07Ga0.93As0.98N0.02 solar cell, with 1.0 eV band gap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6–0.8 μm, and solar cell internal quantum efficiencies >70%...

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Veröffentlicht in:Applied Physics Letters 1999-02, Vol.74 (5), p.729-731
Hauptverfasser: Kurtz, Steven R., Allerman, A. A., Jones, E. D., Gee, J. M., Banas, J. J., Hammons, B. E.
Format: Artikel
Sprache:eng
Schlagworte:
CARRIER LIFETIME
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
DIFFUSION LENGTH
ENERGY GAP
GALLIUM ARSENIDE SOLAR CELLS
IMPURITIES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED SPECTRA
NITROGEN ADDITIONS
PHOTOLUMINESCENCE
QUANTUM EFFICIENCY
SOLAR CELLS
SOLAR ENERGY
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Zusammenfassung:The design, growth by metalorganic chemical vapor deposition, and processing of an In0.07Ga0.93As0.98N0.02 solar cell, with 1.0 eV band gap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6–0.8 μm, and solar cell internal quantum efficiencies >70% are obtained. Optical studies indicate that defects or impurities, from InGaAsN doping and nitrogen incorporation, limit solar cell performance.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123105