Si δ-layers embedded in GaAs

An ultrathin, 1–6 monolayers (MLs) thick, Si δ layer, is embedded in bulk GaAs. The normally observed self-assembling with resulting phase separation can be avoided until δ-layer thickness of 4 MLs, which opens the possibility to study two-dimensional (2D) properties of this III–V/IV heterostructure...

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Veröffentlicht in:Applied physics letters 1998-12, Vol.73 (25), p.3709-3711
Hauptverfasser: Holtz, P. O., Sernelius, B., Buyanov, A. V., Pozina, G., Radamson, H. H., Madsen, L. D., McCaffrey, J. P., Monemar, B., Thordson, J., Andersson, T. G.
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Sprache:eng
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Zusammenfassung:An ultrathin, 1–6 monolayers (MLs) thick, Si δ layer, is embedded in bulk GaAs. The normally observed self-assembling with resulting phase separation can be avoided until δ-layer thickness of 4 MLs, which opens the possibility to study two-dimensional (2D) properties of this III–V/IV heterostructure. Optical, electrical, transport, and structural characterization of the Si δ layer has been carried out. In luminescence, two novel emission bands are observed, which are blueshifted as the width of the Si δ layer is reduced, indicating pronounced 2D properties. The derived results on transition energies and electronic structure are compared with theoretical predictions obtained by a self-consistent approach.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122871